Описание
High speed.
• High breakdown voltage (VCBO=1500V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
• On-chip damper diode.
Collector-to-Base Voltage VCBO 1500 V
Collector-to-Emitter Voltage VCEO 800 V
Emitter-to-Base Voltage VEBO 6 V
Collector Current IC 6 A
Collector Current (Pulse) ICP 15 A
Collector Dissipation PC, Tc=25°C, 30 W